REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS

被引：297

作者：

RIDEOUT, VL ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1016/0038-1101(75)90031-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：541 / 550

页数：10

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[4]

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[5] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J].

BRASLAU, N ;

GUNN, JB ;

STAPLES, JL .

[6]

BRAUN F, 1874, POGG ANN, V153, P556

[7]

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CROWELL, CR ;

RIDEOUT, VL .

CROWELL, CR ;

RIDEOUT, VL .

[10]

ESAKI L, 1972, 11TH P INT C PHYS SE, P431