BEAM-PROPAGATION ANALYSIS OF STRIPE-GEOMETRY SEMICONDUCTOR-LASERS - THRESHOLD BEHAVIOR

被引：38

作者：

AGRAWAL, GP ^{[1
]}

JOYCE, WB ^{[1
]}

DIXON, RW ^{[1
]}

LAX, M ^{[1
]}

机构：

[1] CUNY CITY COLL,DEPT PHYS,NEW YORK,NY 10031

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 01期

关键词：

D O I：

10.1063/1.94138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：11 / 13

页数：3

共 24 条

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[12]

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PATZAK, E ;

ZSCHAUER, KH .

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LENGYEL, G ;

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PATZAK, E ;

ZSCHAUER, KH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (04) :618-625

[17] COMPUTER-MODEL OF AN INJECTION-LASER WITH ASYMMETRICAL GAIN DISTRIBUTION [J].

MARCUSE, D ;

NASH, FR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (01) :30-43

[18] WAVEGUIDING IN A STRIPE-GEOMETRY JUNCTION LASER [J].

PAOLI, TL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :662-668

[19] SEMICONDUCTOR-LASER ANALYSIS - GENERAL-METHOD FOR CHARACTERIZING DEVICES OF VARIOUS CROSS-SECTIONAL GEOMETRIES [J].

SHORE, KA ;

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INTVELD, GH .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (05) :221-229

[20]

SIEGMAN AE, 1974, APPL OPTICS, V14, P1874

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