HIGH-TEMPERATURE OHMIC CONTACT TO N-TYPE 6H-SIC USING NICKEL

被引：166

作者：

CROFTON, J ^{[1
]}

MCMULLIN, PG ^{[1
]}

WILLIAMS, JR ^{[1
]}

BOZACK, MJ ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 03期

关键词：

D O I：

10.1063/1.358936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC were reported. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 500°C and yielded values <5×10-6 Ω cm 2 at both temperatures. The trend shows a decreasing contact resistance at higher temperatures. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer. © 1995 American Institute of Physics.

引用

页码：1317 / 1319

页数：3

共 6 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].