XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE

被引：144

作者：

GRUNTHANER, PJ ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH, PASADENA, CA 91125 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：924 / 929

页数：6

共 14 条

[1]

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[3]

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[4]

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[5] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].

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[6] EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE [J].

GRUNTHANER, FJ ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2108-2112

[7] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

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LEWIS, BF ;

MASERJIAN, J ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1443-1453

[8]

GRUNTHANER PJ, UNPUBLISHED

[9] PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

HILL, JM ;

ROYCE, DG ;

FADLEY, CS ;

WAGNER, LF ;

GRUNTHANER, FJ .

CHEMICAL PHYSICS LETTERS, 1976, 44 (02) :225-231

[10] QUANTITATIVE CHEMICAL-ANALYSIS BY ESCA [J].

PENN, DR .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 9 (01) :29-40

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