CONTACT RESISTIVITY AND DOPANT ACTIVATION IN PULSED-LASER-ANNEALED AU-GE/GAAS CONTACTS

被引：5

作者：

AINA, O

KATZ, W

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12309

[2] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181

来源：

THIN SOLID FILMS | 1983年 / 104卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(83)90583-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：401 / 407

页数：7

共 10 条

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[2]

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[Anonymous], SEMICOND SEMIMET

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[6]

HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[7] PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES [J].

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[8]

PIANETTA PA, 1980, 1979 P S LAS EL BEAM, P328

[9] EXACT DERIVATION OF CONTACT RESISTANCE TO PLANAR DEVICES [J].

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[10] BEHAVIOR OF GERMANIUM IN GALLIUM ARSENIDE [J].

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