ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE

被引：623

作者：

SPEAR, WE ^{[1
]}

LECOMBER, PG ^{[1
]}

机构：

[1] UNIV DUNDEE CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE | 1976年 / 33卷 / 06期

关键词：

D O I：

10.1080/14786437608221926

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：935 / 949

页数：15

共 25 条

[1]

ABKOWITZ M, IN PRESS

[2] OPTICAL AND ELECTRICAL PROPERTIES OF BORON-IMPLANTED AMORPHOUS-GERMANIUM THIN-FILMS [J].

ANDERSON, GW ;

DAVEY, JE ;

COMAS, J ;

SAKS, NS ;

LUCKE, WH .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4528-4533

[3] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J].

CHITTICK, RC ;

ALEXANDE.JH ;

STERLING, HF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :77-&

[4] LOCALIZED AND NONLOCALIZED IMPURITY STATES IN AMORPHOUS GERMANIUM [J].

HAUSER, JJ .

SOLID STATE COMMUNICATIONS, 1973, 13 (09) :1451-1454

[5]

JONES DI, 1976, J NON-CRYST SOLIDS, V20, P259, DOI 10.1016/0022-3093(76)90135-6

[6]

JONES DI, 1976, COMMUN PHYS, V1, P39

[7] NOTE ON HEAVILY DOPED AMORPHOUS GERMANIUM [J].

KOC, S ;

ZAVETOVA, M ;

ZEMEK, J .

CZECHOSLOVAK JOURNAL OF PHYSICS, 1973, B 23 (01) :155-156

[8]

Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[9] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].

LECOMBER, PG ;

SPEAR, WE .

PHYSICAL REVIEW LETTERS, 1970, 25 (08) :509-&

[10]

Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

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