SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM

被引：151

作者：

ABBINK, HC

BROUDY, RM

MCCARTHY, GP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 10期

关键词：

D O I：

10.1063/1.1655818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4673 / &

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