CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON

被引：119

作者：

BOOKER, GR

STICKLER, R

机构：

来源：

关键词：

D O I：

10.1063/1.1931152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3281 / &

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