ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY

被引：73

作者：

ANDREWS, JM ^{[1
]}

机构：

[1] BELL TEL LABS INC, ALLENTOWN, PA 18103 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.1318716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：972 / 984

页数：13

共 44 条

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[2] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J].

ANDREWS, JM ;

KOCH, FB .

SOLID-STATE ELECTRONICS, 1971, 14 (10) :901-&

[3]

ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[4] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J].

ARCHER, RJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) :970-&

[5] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].

ATALLA, MM ;

TANNENBAUM, E ;

SCHEIBNER, EJ .

BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03) :749-783

[6] The image and van der Waals forces at a metallic surface [J].

Bardeen, J .

PHYSICAL REVIEW, 1940, 58 (08) :727-736

[7] ELECTRON CORRELATION AND SCREENING EFFECTS - IN RELATION TO SURFACE PHYSICS [J].

BARDEEN, J .

SURFACE SCIENCE, 1964, 2 :381-388

[8] MEASUREMENT OF THICKNESS AND REFRACTIVE INDEX OF OXIDE FILMS ON SILICON [J].

BOOKER, GR ;

BENJAMIN, CE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) :1206-1212

[9] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].

BOWER, RW ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&

[10] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

← 1 2 3 4 5 →