VAPOR GROWTH PARAMETERS AND IMPURITY PROFILES ON N-TYPE GAAS FILMS GROWN ON N+-GAAS BY HYDROGEN-WATER VAPOR PROCESS

被引：29

作者：

LAWLEY, KL

机构：

来源：

关键词：

D O I：

10.1149/1.2423924

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：240 / &

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