THE CHEMICAL POLISHING OF GALLIUM ARSENIDE IN BROMINE-METHANOL

被引：86

作者：

SULLIVAN, MV

KOLB, GA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1963年 / 110卷 / 06期

关键词：

D O I：

10.1149/1.2425820

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：585 / 587

页数：3

共 8 条

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EDMOND, JT ;

HARDING, WR .

SOLID-STATE ELECTRONICS, 1960, 1 (02) :97-&

[2] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J].

FULLER, CS ;

ALLISON, HW .

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[3]

KLEIN DL, 1961, J ELECTROCHEM SOC, V108, pC60

[4] AN ELECTROPOLISHING TECHNIQUE FOR GERMANIUM AND SILICON [J].

SULLIVAN, MV ;

KLEIN, DL ;

FINNE, RM ;

POMPLIANO, LA ;

KOLB, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :412-419

[5]

SULLIVAN MV, 1961, J ELECTROCHEM SOC, V108, pC60

[6]

SULLIVAN MV, 1960, J ELECTROCHEM SOC, V107, pC191

[7] POLARITY OF GALLIUM ARSENIDE SINGLE CRYSTALS [J].

WHITE, JG ;

ROTH, WC .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) :946-947

[8] ACID CUTTING AND ACID POLISHING OF COPPER CRYSTALS [J].

YOUNG, FW ;

WILSON, TR .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (05) :559-&

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