TECHNOLOGY OF GALLIUM ARSENIDE

被引：36

作者：

CUNNELL, FA

EDMOND, JT

HARDING, WR

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(60)90041-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：97 / &

共 23 条

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[5]

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[7] THE BEHAVIOUR OF SOME IMPURITIES IN III-V COMPOUNDS [J].

EDMOND, JT .

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[8]

EDMOND JT, 1956, APR REP M SEM RUGB, P109

[9]

FOLBERTH DG, 1955, Z NATURFORSCH A, V10, P615

FULLER, CS ;

WHELAND, JM .