Tunneling-based SRAM

This paper describes a new high-density low-power circuit approach for implementing static random access memory (SRAM) using low current density resonant tunneling diodes (RTD's). After an over-view of semiconductor random access memory architecture and technology, the concept of tunneling-based SRAM (TSRAM) is introduced. Experimental results for a compound semiconductor 1-bit 50-nW TSRAM gain cell using low current density (similar to 1 A/cm(2)) RTD's and low-leakage heterostructure field effect transistors al-e presented. We describe a one-transistor TSRAM cell which could convert silicon dynamic RAM (DRAM) to ultradense SRAM if an ultralow current density (similar to 1 mu A/cm(2)) silicon bistable device is developed. Finally, we present experimental and simulation results Sol a TSRAM cell using multipeaked I-V curve devices and a multivalued word line. This approach aims at increasing stola,ae density through vertical integration of bistable devices such as RTD's.