Annealing effects for structural defects of silicon nitride ceramics

被引：9

作者：

Munakata, F ^{[1
]}

Sato, C ^{[1
]}

Hirosaki, N ^{[1
]}

Tanimura, M ^{[1
]}

Akimune, Y ^{[1
]}

Okamoto, Y ^{[1
]}

Inoue, Y ^{[1
]}

机构：

[1] NISSAN ARC LTD INC, YOKOSUKA, KANAGAWA 237, JAPAN

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1997年 / 105卷 / 10期

关键词：

beta-Si3N4; structural defect; dislocation; alpha-type structure; TEM;

D O I：

10.2109/jcersj.105.858

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structural defects of beta-Si3N4 grains were investigated by transmission electron microscopy (TEM). TEM analysis suggested the existence of dislocation, and or-type structure in beta-Si3N4 grains. In paticular, TEM analysis of Si3N4 seeds annealed at 2473 K under 30 MPa in N-2 indicated that the beta-Si3N4 grains contain an alpha-Si3N4 structure.

引用

页码：858 / 861

页数：4

共 16 条

[1]

BRITO ME, 1996, J CERAM SOC JPN, V104, P1171

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