MICROSTRUCTURE CONTROL OF SILICON-NITRIDE BY SEEDING WITH RODLIKE BETA-SILICON NITRIDE PARTICLES

被引:238
作者
HIRAO, K
NAGAOKA, T
BRITO, ME
KANZAKI, S
机构
[1] National Industrial Research Institute of Nagoya, Nagoya, 462, Hirate-cho 1-1, Kita-ku
关键词
D O I
10.1111/j.1151-2916.1994.tb07062.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effect of seeding on microstructure development and mechanical properties of silicon nitride was investigated by the use of morphologically regulated rodlike beta-Si3N4 single-crystal particles with a diameter of 1 mum and a length of 4 mum as seed crystals. Silicon nitride with a bimodal microstructure was fabricated under a relatively low nitrogen gas pressure of 0.9 MPa owing to the epitaxial growth of beta-silicon nitride from the seed particles. Grain growth from seeds followed the empirical equation D(n) - D0n = kt, with growth exponents of 3 and 5 for the c-axis direction and the a-axis direction, respectively, being analogous to the kinetics of matrix grain growth. By seeding morphologically regulated particles, fracture toughness of silicon nitride was improved from 6.3 to 8.4-8.7 MPa . m1/2, retaining high strength levels of about 1 GPa.
引用
收藏
页码:1857 / 1862
页数:6
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