高导热氮化硅陶瓷的低温烧结和性能研究

被引：3

作者：

张景贤 ^{[1
]}

段于森 ^{[1
]}

江东亮 ^{[1
]}

陈忠明 ^{[1
]}

刘学建 ^{[1
]}

黄政仁 ^{[1
]}

杨建 ^{[2
]}

李晓云 ^{[2
]}

丘泰 ^{[2
]}

机构：

[1] 中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室

[2] 南京工业大学材料科学与工程学院

来源：

真空电子技术 | 2017年 / 05期

关键词：

氮化硅基片; 流延成型; 硅粉氮化; 无压烧结;

D O I：

10.16540/j.cnki.cn11-2485/tn.2017.05.004

中图分类号：

TQ174.1 [基础理论];

学科分类号：

0805 ; 080502 ;

摘要：

以Si粉体作为起始原料,以ZrO2-Y2O3-MgO作为三元烧结助剂体系,通过流延成型和低温无压烧结工艺制备高导热氮化硅陶瓷基片,研究了ZrO2的引入对于氮化硅陶瓷的低温烧结致密化和热导率的影响规律。实验发现,氧化锆的引入可以明显降低烧结温度,在1800℃实现氮化硅陶瓷的无压烧结,材料的密度可以达到99%以上,热导率达到72 W/m·K。

引用

页码：16 / 19+71 +71

页数：5

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