ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE

被引：87

作者：

GERSHENZON, M

MIKULYAK, RM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 07期

关键词：

D O I：

10.1063/1.1736232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1338 / &

共 33 条

[21] OBSERVATION OF MICROPLASMA PULSES AND ELECTROLUMINESCENCE IN GALLIUM PHOSPHIDE SINGLE CRYSTAL [J].

KIKUCHI, M ;

IIZUKA, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) :935-936

[22] INFRARED LATTICE ABSORPTION OF GAP [J].

KLEINMAN, DA ;

SPITZER, WG .

PHYSICAL REVIEW, 1960, 118 (01) :110-117

[23] BIMOLECULAR ELECTROLUMINESCENT TRANSITIONS IN GAP [J].

LOEBNER, EE ;

POOR, EW .

PHYSICAL REVIEW LETTERS, 1959, 3 (01) :23-25

[24]

LOEBNER EE, 1959, B AM PHYS SOC, V4, P45

[25] OBSERVATIONS OF ZENER CURRENT IN GERMANIUM P-N JUNCTIONS [J].

MCAFEE, KB ;

RYDER, EJ ;

SHOCKLEY, W ;

SPARKS, M .

PHYSICAL REVIEW, 1951, 83 (03) :650-651

[26]

Moss TS., 1959, OPTICAL PROPERTIES S

[27] ION DRIFT IN AN N-P JUNCTION [J].

PELL, EM .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :291-302

[28] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[29] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[30] OPTICAL ABSORPTION IN N-TYPE GALLIUM PHOSPHIDE [J].

SPITZER, WG ;

GERSHENZON, M ;

FROSCH, CJ ;

GIBBS, DF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) :339-341

← 1 2 3 4 →