ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE

被引:87
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GERSHENZON, M
MIKULYAK, RM
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10.1063/1.1736232
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O59 [应用物理学];
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页码:1338 / &
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[1]  
ALFREY GF, 1960, ICPSS 1958, V2, P747
[2]  
ALLEN JW, 1959, J ELECTRON CONTR, V7, P518
[3]   MICROPLASMA FLUCTUATIONS IN SILICON [J].
CHAMPLIN, KS .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) :1039-1050
[4]   PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1956, 102 (02) :369-376
[5]   EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1103-1110
[6]   INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 106 (03) :418-426
[7]  
CHYNOWETH AG, 1960, PROGRESS SEMICONDUCT, V4, P97
[8]  
CHYNOWETH AG, 1959, J APPL PHYS, V30, P1811
[9]   THE EFFECT OF PRESSURE ON ZINC BLENDE AND WURTZITE STRUCTURES [J].
EDWARDS, AL ;
SLYKHOUSE, TE ;
DRICKAMER, HG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (1-2) :140-148
[10]  
FOLBERTH OG, 1954, Z NATURFORSCH, V9A, P1050