TIME-DEPENDENCE OF THE REFLECTIVITY OF SI AT 633 AND 488 NM DURING PULSED LASER ANNEALING

被引：24

作者：

NATHAN, MI

HODGSON, RT

YOFFA, EJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：512 / 513

页数：2

共 9 条

[1] DYNAMICS OF Q-SWITCHED LASER ANNEALING [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SIMONS, AL ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :777-779

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[3] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS [J].

KHAIBULLIN, IB ;

SHTYRKOV, EI ;

ZARIPOV, MM ;

BAYAZITOV, RM ;

GALJAUTDINOV, MF .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :225-233

[4] COMPUTER-SIMULATION OF LASER ANNEALING SILICON AT 1.06 MU-M [J].

SCHULTZ, JC ;

COLLINS, RJ .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :84-87

[5] CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING [J].

SURKO, CM ;

SIMONS, AL ;

AUSTON, DH ;

GOLOVCHENKO, JA ;

SLUSHER, RE ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :635-637

[6] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW ;

HOONHOUT, D .

PHYSICS LETTERS A, 1979, 74 (06) :417-421

[7] NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW .

PHYSICS LETTERS A, 1979, 74 (06) :422-426

[8] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

WANG, JC ;

WOOD, RF ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :455-458

[9] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

WHITE, CW ;

NARAYAN, J ;

YOUNG, RT .

SCIENCE, 1979, 204 (4392) :461-468

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