THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON

被引：122

作者：

WANG, JC

WOOD, RF

PRONKO, PP

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 05期

关键词：

D O I：

10.1063/1.90377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：455 / 458

页数：4

共 12 条

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PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[2] THERMAL CONDUCTIVITY ELECTRICAL RESISTIVITY AND SEEBECK COEFFICIENT OF SILICON FROM 100 TO 1300 DEGREE K [J].

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MOORE, JP ;

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GRAVES, RS ;

MCELROY, DL .

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[3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

GAT, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :142-144

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[5] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

GLASSBRENNER, CJ ;

SLACK, GA .

PHYSICAL REVIEW, 1964, 134 (4A) :1058-+

[6]

GRINBERG AA, 1967, FIZ TVERD TELA+, V9, P1085

[7]

KACHURIN GA, 1977, SOV PHYS SEMICOND+, V11, P350

[8]

KODERA H, 1965, JPN J APPL PHYS, V2, P212

[9] THERMAL CONDUCTIVITY OF SILICON FROM 300 TO 1400 DEGREES K [J].

SHANKS, HR ;

SIDLES, PH ;

MAYCOCK, PD ;

DANIELSON, GC .

PHYSICAL REVIEW, 1963, 130 (05) :1743-&

[10]

SHASHKOV YM, 1968, RUSS J PHYS CH USSR, V42, P1082

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