SELF-ORGANIZED GROWTH OF REGULAR NANOMETER-SCALE INAS DOTS ON GAAS

被引：914

作者：

MOISON, JM ^{[1
]}

HOUZAY, F ^{[1
]}

BARTHE, F ^{[1
]}

LEPRINCE, L ^{[1
]}

ANDRE, E ^{[1
]}

VATEL, O ^{[1
]}

机构：

[1] FRANCE TELECOM, CTR NATL ETUD TELECOMMUN, CTR NORBERT SEGARD, F-38243 MEYLAN, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.111502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition of InAs on GaAs proceeds first by two-dimensional (2D) growth and above a 1.75-monolayer coverage by the formation of single-crystal dots on a residual 2D wetting layer. By atomic force microscopy measurements, we show that the first dots formed are in the quantum size range (height 30 Angstrom half-base 120 Angstrom), that the dispersion on their sizes is remarkably low (+/- 10%), and that they are located fairly regularly (interdot distance 600 Angstrom). Upon further growth, density and shapes do not change but sizes increase up to double values before coalescence occurs. Self-organized growth in strained structures is then shown to be a simple and efficient way of building regular quantum dots.

引用

页码：196 / 198

页数：3