DYNAMICS OF LASER-INDUCED VAPORIZATION FOR ULTRAFAST DEPOSITION OF AMORPHOUS-SILICON FILMS

被引：45

作者：

HANABUSA, M

SUZUKI, M

NISHIGAKI, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 05期

关键词：

D O I：

10.1063/1.92347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：385 / 387

页数：3

共 11 条

[1]

BRODSKY MH, 1979, AMORPHOUS SEMICONDUC

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[4]

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[6] TIME-DEPENDENCE OF THE REFLECTIVITY OF SI AT 633 AND 488 NM DURING PULSED LASER ANNEALING [J].

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[7]

READY JF, 1971, EFFECTS HIGH POWER L

[8]

READY JF, 1978, IND APPLICATIONS LAS

[9] ORDER-DISORDER TRANSITION IN SINGLE-CRYSTAL SILICON INDUCED BY PULSED UV LASER IRRADIATION [J].

TSU, R ;

HODGSON, RT ;

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BAGLIN, JE .

PHYSICAL REVIEW LETTERS, 1979, 42 (20) :1356-1358

[10] SPECTROSCOPIC STUDY ON EVAPORATION OF ALUMINUM AS IRRADIATED BY A LONG-PULSE ND LASER [J].

WEI, PSP .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4196-4201

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