THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS

被引：196

作者：

HASEGAWA, H

机构：

来源：

PHYSICAL REVIEW | 1963年 / 129卷 / 03期

关键词：

D O I：

10.1103/PhysRev.129.1029

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1029 / &

共 20 条

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