CHEMICAL-STRUCTURE OF ULTRATHIN THERMALLY GROWN OXIDES ON A SI(100)-WAFER USING CORE LEVEL PHOTOEMISSION

被引：81

作者：

BRAUN, W ^{[1
]}

KUHLENBECK, H ^{[1
]}

机构：

[1] UNIV OSNABRUCK,FACHBEREICH PHYS,D-4500 OSNABRUCK,FED REP GER

来源：

SURFACE SCIENCE | 1987年 / 180卷 / 01期

关键词：

D O I：

10.1016/0039-6028(87)90049-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：279 / 288

页数：10

共 15 条

[1]

BAALMANN A, 1984, THESIS U OSNABRUCK

[2]

BRAUN W, 1983, ANN ISRAEL PHYS SOC, V6, P351

[3]

BRAUN W, 1986, SURFACE INTERFACE AN

[4]

Carlson T. A., 1972, Journal of Electron Spectroscopy and Related Phenomena, V1, P161, DOI 10.1016/0368-2048(72)80029-X

[5] INTERPRETATION OF XPS CORE LEVEL SHIFTS AND STRUCTURE OF THIN SILICON-OXIDE LAYERS [J].

FINSTER, J ;

SCHULZE, D ;

BECHSTEDT, F ;

MEISEL, A .

SURFACE SCIENCE, 1985, 152 (APR) :1063-1070

[6] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI [J].

GARNER, CM ;

LINDAU, I ;

SU, CY ;

PIANETTA, P ;

SPICER, WE .

PHYSICAL REVIEW B, 1979, 19 (08) :3944-3956

[7] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

VASQUEZ, RP ;

LEWIS, BF ;

MASERJIAN, J ;

MADHUKAR, A .

PHYSICAL REVIEW LETTERS, 1979, 43 (22) :1683-1686

[8] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].

HIMPSEL, FJ ;

HEIMANN, P ;

CHIANG, TC ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115

[9] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J].

HOLLINGER, G ;

HIMPSEL, FJ .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :93-95

[10] OXYGEN-CHEMISORPTION AND OXIDE FORMATION ON SI(111) AND SI(100) SURFACES [J].

HOLLINGER, G ;

HIMPSEL, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :640-645

← 1 2 →