ORIGINS OF (111) SURFACE RECONSTRUCTIONS OF SI AND GE

被引：13

作者：

CHADI, DJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：989 / 992

页数：4

共 15 条

[1] ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE [J].

CHADI, DJ ;

BAUER, RS ;

WILLIAMS, RH ;

HANSSON, GV ;

BACHRACH, RZ ;

MIKKELSEN, JC ;

HOUZAY, F ;

GUICHAR, GM ;

PINCHAUX, R ;

PETROFF, Y .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :799-802

[2]

CHADI DJ, UNPUBLISHED

[3] ELECTRONIC SURFACE-STATES ON RELAXED (111) SURFACE OF GE [J].

CHELIKOWSKY, JR .

PHYSICAL REVIEW B, 1977, 15 (06) :3236-3242

[4] POSSIBILITY OF INVOKING JAHN-TELLER EFFECT IN INTERPRETING PERMANENT DEFORMATION DETECTED BY DIFFRACTION OF LIGHT ELECTRONS ON DENSE SILICON AND GERMANIUM FACES [J].

DUCROS, P .

SURFACE SCIENCE, 1968, 10 (02) :295-&

[5]

HANSSON GV, UNPUBLISHED

[6] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION [J].

JONA, F .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) :375-&

[7] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) :1403-&

[8] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&

[9] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

LANDER, JJ ;

GOBELL, GW ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+

[10]

LANDER JJ, 1965, SOLID STATE CHEM, V2, P26

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