TUNNELING IN THIN MOS STRUCTURES

被引：199

作者：

MASERJIAN, J ^{[1
]}

机构：

[1] CALTECH, JET PROP LAB, PASADENA, CA 91103 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.1318719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：996 / 1003

页数：8

共 16 条

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