IN/GAAS REACTION - EFFECT OF AN INTERVENING OXIDE LAYER

被引：25

作者：

DING, J

WASHBURN, J

SANDS, T

KERAMIDAS, VG

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[2] BELL COMMUN RES INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 13期

关键词：

D O I：

10.1063/1.97557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：818 / 820

页数：3

共 10 条

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[8]

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[9] OHMIC CONTACTS TO NORMAL-GAAS USING GRADED BAND-GAP LAYERS OF GA1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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