ANGULAR-RESOLVED PHOTOEMISSION FROM GAAS(110) SURFACES WITH ADSORBED A1

被引：36

作者：

HUIJSER, A

VANLAAR, J

VANROOY, TL

机构：

来源：

SURFACE SCIENCE | 1981年 / 102卷 / 01期

关键词：

D O I：

10.1016/0039-6028(81)90320-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：264 / 270

页数：7

共 16 条

[1] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343

[2] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[3] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J].

CHADI, DJ ;

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1159-1163

[4] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[5]

HESS E, 1973, PHYS STATUS SOLIDI B, V55, P187, DOI [10.1002/pssb.2220560254, 10.1002/pssb.2220550118]

[6] ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES [J].

HUIJSER, A ;

VANLAAR, J ;

VANROOY, TL .

PHYSICS LETTERS A, 1978, 65 (04) :337-339

[7] ANGLE-RESOLVED PHOTOEMISSION STUDIES OF SURFACE-STATES ON (110) GAAS [J].

KNAPP, JA ;

LAPEYRE, GJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :757-760

[8]

Ludeke R., 1975, Surface Science, V47, P132, DOI 10.1016/0039-6028(75)90279-4

[9] VALENCE AND CORE LEVEL PHOTOEMISSION SPECTRA OF ALXGA1-XAS [J].

LUDEKE, R ;

LEY, L ;

PLOOG, K .

SOLID STATE COMMUNICATIONS, 1978, 28 (01) :57-60

[10] ELECTRONIC-STRUCTURE OF AL CHEMISORBED ON GAAS(110) [J].

MELE, EJ ;

JOANNOPOULOS, JD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1154-1158

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