PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE

被引：294

作者：

TIETJEN, JJ

AMICK, JA

机构：

来源：

关键词：

D O I：

10.1149/1.2424100

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：724 / &

共 18 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

[2]

ABRAHAMS MS, TO BE PUBLISHED

[3]

AMICK JA, 1963, RCA REV, V24, P555

CUSANO, DA ;

CARLSON, RO ;

FENNER, GE .

[5]

FENNER GE, 1964, PHYS REV, V134, P1113

[6]

FLICKER H, 1960, B AM PHYS SOC, V5, P407

GOTTLIEB, GE .

[8]

GOYDISH BL, TO BE PUBLISHED

[9]

Hilsum C., 1961, SEMICONDUCTING 3 4 C, P167

[10]

HOLONYAK N, 1962, METALLURGY SEMICONDU, P49