IMPURITY COMPENSATION AND MAGNETORESISTANCE IN P-TYPE SILICON

被引：3

作者：

LONG, D

MOTCHENBACHER, CD

MYERS, J

机构：

来源：

关键词：

D O I：

10.1063/1.1735167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：353 / 362

页数：10

共 25 条

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