EFFECTIVE MASSES OF ELECTRONS IN SILICON

被引：48

作者：

DEXTER, RN

LAX, B

KIP, AF

DRESSELHAUS, G

机构：

来源：

PHYSICAL REVIEW | 1954年 / 96卷 / 01期

关键词：

D O I：

10.1103/PhysRev.96.222

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：222 / 223

页数：2

共 6 条

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DEXTER, RN ;

ZEIGER, HJ ;

LAX, B .

PHYSICAL REVIEW, 1954, 95 (02) :557-558

[2] OBSERVATION OF CYCLOTRON RESONANCE IN GERMANIUM CRYSTALS [J].

DRESSELHAUS, G ;

KIP, AF ;

KITTEL, C .

PHYSICAL REVIEW, 1953, 92 (03) :827-827

[3] DIRECTIONAL PROPERTIES OF THE CYCLOTRON RESONANCE IN GERMANIUM [J].

LAX, B ;

ZEIGER, HJ ;

DEXTER, RN ;

ROSENBLUM, ES .

PHYSICAL REVIEW, 1954, 93 (06) :1418-1420

[4]

PEARSON GL, 1954, IN PRESS PHYSICA

SHOCKLEY, W .

PHYSICAL REVIEW, 1953, 90 (03) :491-491

[6] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].

SMITH, CS .

PHYSICAL REVIEW, 1954, 94 (01) :42-49