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CHANGES OF OPTICAL REFLECTIVITY (1.8-EVTO2.2-EV) INDUCED BY 40-KEV ANTIMONY ION BOMBARDMENT OF SILICON

被引：20
作者：
HART, RR
MARSH, OJ
机构：
[1] Hughes Research Laboratories, Malibu
来源：
APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 07期
关键词：
D O I：
10.1063/1.1652789
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have measured the fractional change in the optical reflectivity of silicon in the 1.8-2.2 eV photon energy band as a function of 40-keV antimony ion dose (1011-1015 Sb/cm2 at various implant temperatures (- 160-405°C). Approximate agreement is found between the change of reflectivity and previous measurements of lattice disorder as determined by backscattering of 1-MeV He ions. © 1969 The American Institute of Physics.
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页码：225 / &
相关论文
共 5 条
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DAVIES, JA ;
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MAYER, JW .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&
[2]   IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].
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[3]   ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN 1-EV TO 6-EV REGION [J].
KURTIN, S ;
SHIFRIN, GA ;
MCGILL, TC .
APPLIED PHYSICS LETTERS, 1969, 14 (07) :223-&
[4]   INFLUENCE OF TEMPERATURE AND CHANNELING ON ION-BOMBARDMENT DAMAGE IN SI [J].
NELSON, RS ;
MAZEY, DJ .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :689-&
[5]   TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN SI BY 40 KEV SB IONS [J].
PICRAUX, ST ;
WESTMORE.JE ;
MAYER, JW ;
HART, RR ;
MARSH, OJ .
APPLIED PHYSICS LETTERS, 1969, 14 (01) :7-&
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