FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES

被引:189
作者
HIRAKI, A
MAYER, JW
LUGUJJO, E
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10.1063/1.1661782
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O59 [应用物理学];
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页码:3643 / &
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共 14 条
[1]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[2]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[3]  
GROVE AS, 1967, PHYS TECHNOL S, P41
[4]   ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].
GYULAI, J ;
MAYER, JW ;
RODRIGUEZ, V ;
YU, AYC ;
GOPEN, HJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3578-+
[5]  
Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[6]   LOW-TEMPERATURE MIGRATION OF SILICON THROUGH METAL FILMS IMPORTANCE OF SILICON-METAL INTERFACE [J].
HIRAKI, A ;
LUGUJJO, E ;
NICOLET, MA ;
MAYER, JW .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02) :401-&
[7]   LOW-TEMPERATURE MIGRATION OF SILICON IN METAL-FILMS ON SILICON SUBSTRATES STUDIED BY BACKSCATTERING TECHNIQUES [J].
HIRAKI, A ;
LUGUJJO, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01) :155-&
[8]   LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J].
HIRAKI, A ;
NICOLET, MA ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1971, 18 (05) :178-&
[10]  
MAYER JW, 1970, ION IMPLANTATION SEM, pCH4