EFFECT OF SUBSTRATE SURFACE-TREATMENT IN MOLECULAR-BEAM EPITAXY ON THE VERTICAL ELECTRONIC TRANSPORT THROUGH THE FILM-SUBSTRATE INTERFACE

被引：31

作者：

CHANG, CA

HEIBLUM, M

LUDEKE, R

NATHAN, MI

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 03期

关键词：

D O I：

10.1063/1.92689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：229 / 231

页数：3

共 7 条

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[5] REMOVAL OF THE HIGH-RESISTIVITY LAYER AT THE N ON N+ LIQUID-PHASE EPITAXIAL GAAS LAYER SUBSTRATE INTERFACE BY CONTROLLED INSITU ETCH-BACK [J].

SEABAUGH, AC ;

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6435-6437

[6] IMPROVED MOLECULAR-BEAM EPITAXIAL GAAS POWER FETS [J].

WOOD, CEC ;

DESIMONE, D ;

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2074-2078

[7]

WOOD CEC, 1978, J APPL PHYS, V49, P4853

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