ELECTROREFLECTANCE AND RAMAN-SCATTERING INVESTIGATION OF GLOW-DISCHARGE AMORPHOUS SI-F-H

被引：45

作者：

TSU, R ^{[1
]}

IZU, M ^{[1
]}

OVSHINSKY, SR ^{[1
]}

POLLAK, FH ^{[1
]}

机构：

[1] CUNY BROOKLYN COLL, DEPT PHYS, BROOKLYN, NY 11210 USA

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 36卷 / 09期

关键词：

D O I：

10.1016/0038-1098(80)90019-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：817 / 822

页数：6

共 32 条

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[2] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].

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[3]

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[4]

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[5]

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[6]

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[7]

BRODSKY MH, 1975, LIGHT SCATTERING SOL, P208

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[9]

CARDONA M, 1967, SEMICONDUCT SEMIMET, V3, P125

[10]

Connell G. A. N., 1979, Amorphous semiconductors, P73

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