DEFECTS IN EPITAXIAL GALLIUM PHOSPHIDE LAYERS

被引：3

作者：

BROWN, AS

SPRINGTHORPE, AJ

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1971年 / 7卷 / 02期

关键词：

D O I：

10.1002/pssa.2210070224

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：495 / +

页数：1

共 16 条

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ABRAHAMS, MS ;

WEISBERG, LR ;

TIETJEN, JJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3754-&

[2] DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :1973-&

[3] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].

ABRAHAMS, MS ;

WEISBERG, LR ;

BUIOCCHI, CJ ;

BLANC, J .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&

[4] ELECTRICAL MEASUREMENTS + X-RAY LATTICE PARAMETER MEASUREMENTS OF GAAS DOPED WITH SE TE ZN + CD + STRESS EFFECTS OF THESE ELEMENTS AS DIFFUSANTS IN GAAS [J].

BLACK, J ;

LUBLIN, P .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) :2462-&

[5] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES [J].

HACKETT, WH ;

SAUL, RH ;

VERLEUR, HW ;

BASS, SJ .

APPLIED PHYSICS LETTERS, 1970, 16 (12) :477-&

[6]

HACKETT WH, 1970, MAY EL SOC M LOS ANG

[7] Defects in Epitaxial Films of Semiconducting Compounds with the Sphalerite Structure [J].

Holt, D. B. .

JOURNAL OF MATERIALS SCIENCE, 1966, 1 (03) :280-295

[8] COMPOSITIONAL X-RAY TOPOGRAPHY [J].

HOWARD, JK ;

DOBROTT, RD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) :567-&

[9] DIRECT OBSERVATION OF INDIVIDUAL DISLOCATIONS BY X-RAY DIFFRACTION [J].

LANG, AR .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (03) :597-598

[10] METHOD FOR THE DETECTION OF DISLOCATIONS IN SILICON BY X-RAY EXTINCTION CONTRAST [J].

NEWKIRK, JB .

PHYSICAL REVIEW, 1958, 110 (06) :1465-1466

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