SCHOTTKY AND OHMIC AU CONTACTS ON GAAS - MICROSCOPIC AND ELECTRICAL INVESTIGATION

被引:41
作者
LILIENTALWEBER, Z
GRONSKY, R
WASHBURN, J
NEWMAN, N
SPICER, WE
WEBER, ER
机构
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期
关键词
D O I
10.1116/1.583536
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:912 / 918
页数:7
相关论文
共 24 条
[1]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[2]   SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].
FREEOUF, JL ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729
[3]   CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION [J].
GRANT, RW ;
WALDROP, JR ;
KOWALCZYK, SP ;
KRAUT, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :477-480
[4]   TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES [J].
HARRISON, WA ;
TERSOFF, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1068-1073
[5]   THEORY OF SURFACE STATES [J].
HEINE, V .
PHYSICAL REVIEW, 1965, 138 (6A) :1689-&
[6]   ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J].
KUAN, TS ;
BATSON, PE ;
JACKSON, TN ;
RUPPRECHT, H ;
WILKIE, EL .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6952-6957
[7]   ELECTRON-MICROSCOPY STUDY OF THE AUGE/NI/AU CONTACTS ON GAAS AND GAALAS [J].
LILIENTAL, Z ;
CARPENTER, RW ;
ESCHER, J .
ULTRAMICROSCOPY, 1984, 14 (1-2) :135-143
[8]  
LILIENTALWEBER Z, UNPUB APPL PHYS LETT
[9]  
LILIENTALWEBER Z, 1986, THIN FILMS INTERFACE, V54, P415
[10]  
LILIENTALWEBER Z, 1986, P SOC PHOTO OPTICAL, V623