LSI YIELD MODELING AND PROCESS MONITORING

被引:63
作者
STAPPER, CH [1 ]
机构
[1] IBM CORP,SYST PROD DIV LAB,BURLINGTON,VT 05452
关键词
D O I
10.1147/rd.203.0228
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:228 / 234
页数:7
相关论文
共 12 条
[2]  
DENNARD RA, COMMUNICATION
[3]   DEFECT ANALYSIS AND YIELD DEGRADATION OF INTEGRATED-CIRCUITS [J].
GUPTA, A ;
PORTER, WA ;
LATHROP, JW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (03) :96-103
[4]   8K B RANDOM-ACCESS MEMORY CHIP USING ONE-DEVICE FET CELL [J].
HOFFMAN, WK ;
KALTER, HL .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (05) :298-305
[5]  
LAWSON TR, 1966, SOLID STATE TECHNOL, V7, P22
[6]  
MOORE GE, 1970, ELECTRONICS, V43, P126
[7]   COST-SIZE OPTIMA OF MONOLITHIC INTEGRATED CIRCUITS [J].
MURPHY, BT .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1537-&
[8]  
SEEDS RB, 1967, 1967 IEEE INT CONV 6, P60
[9]   DEFECT DENSITY DISTRIBUTION FOR LSI YIELD CALCULATIONS [J].
STAPPER, CH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (07) :655-657
[10]  
THOMAS DR, 1974, GOV MICROCIRCUIT APP, P196