MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON

被引：251

作者：

BEALE, MIJ

CHEW, NG

UREN, MJ

CULLIS, AG

BENJAMIN, JD

机构：

[1] Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl

来源：

关键词：

ANODIZATION PROCESS - DOPING LEVEL - ELECTRON MICROSCOPY - POROUS SILICON;

D O I：

10.1063/1.95807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：86 / 88

页数：3

共 10 条

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[2]

BEALE MIJ, 1984, 3RD INT C MOL BEAM E

[3]

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[4]

HARDEMAN R, 1983, SURF SCI

[5]

IMAI K, 1981, P INT ELECTRON DEVIC, P376

[6]

MANO T, 1982, S VERY LARGE SCALE I, P12

[7]

PICKERING C, 1984, 6TH INT C THIN FILMS

[8]

Sze SM, 1981, PHYSICS SEMICONDUCTO, P250

[9] ELECTROPOLISHING SILICON IN HYDROFLUORIC ACID SOLUTIONS [J].

TURNER, DR .

UNAGAMI, T .