NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE

被引:184
作者
MARSHALL, ED
ZHANG, B
WANG, LC
JIAO, PF
CHEN, WX
SAWADA, T
LAU, SS
KAVANAGH, KL
KUECH, TF
机构
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.339705
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:942 / 947
页数:6
相关论文
共 25 条
[1]   NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J].
BARNES, PA ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :651-653
[2]   MODELS FOR CONTACTS TO PLANAR DEVICES [J].
BERGER, HH .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&
[3]   ALLOYED OHMIC CONTACTS TO GAAS [J].
BRASLAU, N .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807
[4]  
BRASLAU N, 1967, SOLID STATE ELECTRON, V10, P38
[5]   POWER GAAS-MESFET - RELIABILITY ASPECTS AND FAILURE MECHANISMS [J].
CANALI, C ;
CASTALDO, F ;
ZANONI, E .
MICROELECTRONICS AND RELIABILITY, 1984, 24 (05) :947-955
[6]   SOLID-PHASE EPITAXIAL PD/GE OHMIC CONTACTS TO IN1-XGAXASYP1-Y/INP [J].
CHEN, WX ;
HSUEH, SC ;
YU, PKL ;
LAU, SS .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (08) :471-473
[7]  
DINGFEN W, 1986, SOLID STATE ELECTRON, V29, P489
[8]  
FAN C, 1986, J OPT QUAN ELECTRON, V18, P174
[9]   PD-GE CONTACTS TO N-TYPE GAAS [J].
GRINOLDS, HR ;
ROBINSON, GY .
SOLID-STATE ELECTRONICS, 1980, 23 (09) :973-&
[10]   GALLIUM-VACANCY-DEPENDENT DIFFUSION-MODEL OF OHMIC CONTACTS TO GAAS [J].
GUPTA, RP ;
KHOKLE, WS .
SOLID-STATE ELECTRONICS, 1985, 28 (08) :823-830