STRAIN RELIEF AND GROWTH MODES IN WURTZITE TYPE EPITAXIAL LAYERS OF CDSE AND CDS AND IN CDSE/CDS SUPERLATTICES

被引：12

作者：

GRUN, M ^{[1
]}

HETTERICH, M ^{[1
]}

KLINGSHIRN, C ^{[1
]}

ROSENAUER, A ^{[1
]}

ZWECK, J ^{[1
]}

GEBHARDT, W ^{[1
]}

机构：

[1] UNIV REGENSBURG,DEPT PHYS,D-93053 REGENSBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90797-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The relaxation of the mismatch-induced strain in (0001) wurtzite type epilayers of CdSe and CdS and of related superlattices on GaAs(111) is discussed. For CdSe/GaAs(111), high-resolution electron microscopy shows that the misfit dislocations are 60-degrees dislocations, the glide of which is limited to the plane parallel to the interface. The epilayers are therefore free of in-grown threading arms. The thickness of that region in the layer, which is significantly strained, is found to be larger in case of a two-dimensional growth mode than in case of a three-dimensional one.

引用

页码：150 / 154

页数：5

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