PD-NI-SI-BE-B LIQUID-METAL ION-SOURCE FOR MASKLESS ION-IMPLANTATION

被引：16

作者：

ARIMOTO, H

TAKAMORI, A

MIYAUCHI, E

HASHIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 03期

关键词：

D O I：

10.1143/JJAP.23.L165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L165 / L166

页数：2

共 15 条

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[2]

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[5]

MIYAUCHI E, 1983, JPN J APPL PHYS 2, V22, pL225

[6] LATERAL SPREADS OF BE AND SI IN GAAS IMPLANTED WITH A MASKLESS ION-IMPLANTATION SYSTEM [J].

MIYAUCHI, E ;

ARIMOTO, H ;

BAMBA, Y ;

TAKAMORI, A ;

HASHIMOTO, H ;

UTSUMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L423-L425

[7] A 100 KV MASKLESS ION-IMPLANTATION SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE FOR III-V-COMPOUND SEMICONDUCTORS [J].

MIYAUCHI, E ;

ARIMOTO, H ;

HASHIMOTO, H ;

FURUYA, T ;

UTSUMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05) :L287-L288

[8]

Muller E W, 1969, FIELD ION MICROSCOPY

[9]

NAMBA S, P INT ION ENG C ISIA, V3, P1533

[10]

OKUNUKI M, 1982, 6TH P S ISIAT, P71

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