HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS

被引：162

作者：

CAMPBELL, JC

DENTAI, AG

HOLDEN, WS

KASPER, BL

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 20期

关键词：

D O I：

10.1049/el:19830558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：818 / 820

页数：3

共 15 条

[1] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE [J].

ANDO, H ;

KANBE, H ;

ITO, M ;

KANEDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L277-L280

[2]

COOK LW, 1981, I PHYS C SER, V56, P361

[3]

DENTAI AG, 1981, IOP C P, V63, P467

[4] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

KIM, OK ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98

[5] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING [J].

FORREST, SR ;

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :322-325

[6] A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT [J].

KIM, OK ;

FORREST, SR ;

BONNER, WA ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :402-404

[7] VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS-INP PIN PUNCH-THROUGH PHOTO-DIODES [J].

LEE, TP ;

BURRUS, CA ;

OGAWA, K ;

DENTAI, AG .

ELECTRONICS LETTERS, 1981, 17 (12) :431-432

[8]

LINKE RA, 1983, ELECTRON LETT, V19

[9] HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE WITH INGAASP BUFFER LAYERS [J].

MATSUSHIMA, Y ;

AKIBA, S ;

SAKAI, K ;

KUSHIRO, Y ;

NODA, Y ;

UTAKA, K .

ELECTRONICS LETTERS, 1982, 18 (22) :945-946

[10]

MATSUSHIMA Y, 1981, IEEE ELECTRON DEVICE, V2, P179

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