PHASE-EQUILIBRIA IN METAL-GALLIUM-ARSENIC SYSTEMS - THERMODYNAMIC CONSIDERATIONS FOR METALLIZATION MATERIALS

被引：113

作者：

BEYERS, R ^{[1
]}

KIM, KB ^{[1
]}

SINCLAIR, R ^{[1
]}

机构：

[1] STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2195 / 2202

页数：8

共 78 条

[1] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343

[2] THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS [J].

BEYERS, R .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :147-152

[3] PHASE-EQUILIBRIA IN THIN-FILM METALLIZATIONS [J].

BEYERS, R ;

SINCLAIR, R ;

THOMAS, ME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :781-784

[4]

BEYERS R, 1985, MATER RES SOC S P, V47, P143

[5] OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

THIN SOLID FILMS, 1983, 104 (3-4) :391-397

[6] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J].

BRASLAU, N ;

GUNN, JB ;

STAPLES, JL .

SOLID-STATE ELECTRONICS, 1967, 10 (05) :381-+

[7] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[8] INTERFACE CHEMICAL-REACTION AND DIFFUSION OF THIN METAL-FILMS ON SEMICONDUCTORS [J].

BRILLSON, LJ .

THIN SOLID FILMS, 1982, 89 (04) :461-469

[9] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[10] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

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