INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS

被引:75
作者
BARRERA, JS [1 ]
ARCHER, RJ [1 ]
机构
[1] HEWLETT PACKARD LAB,1501 PAGE MILL RD,PALO ALTO,CA 94304
关键词
D O I
10.1109/T-ED.1975.18263
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1023 / 1030
页数:8
相关论文
共 18 条
[1]  
ARCHER RJ, 1970, AFALTR70256 AIR FORC
[3]  
BARRERA JS, 1974, ECOM02801 US ARM EL
[4]   COMMENT ON DETERMINATION OF VELOCITY-FIELD CHARACTERISTIC FOR N-TYPE INDIUM PHOSPHIDE FROM DIPOLE-DOMAIN MEASUREMENTS [J].
BOERS, PM .
ELECTRONICS LETTERS, 1973, 9 (06) :134-135
[5]   STUDY OF ELECTRON-ENERGY RELAXATION-TIMES IN GAAS AND INP [J].
GLOVER, GH .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1295-1301
[6]   CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J].
HOWER, PL ;
BECHTEL, NG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :213-220
[7]  
LAM HT, 1971, ELECTRON LETT, V7, P722
[8]   DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].
LIECHTI, CA ;
TILLMAN, RL .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (05) :510-517
[9]  
LIECHTI CA, COMMUNICATION
[10]  
LIECHTI CA, 1972, ISSCC DIG TECH PAPER, P158