INTERFACE AND PRECIPITATION EFFECTS IN SOLID-PHASE EPITAXY OF SB IMPLANTED AMORPHOUS SI

被引:7
作者
CAMPISANO, SU [1 ]
GIBSON, JM [1 ]
POATE, JM [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.95546
中图分类号
O59 [应用物理学];
学科分类号
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页码:580 / 581
页数:2
相关论文
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[3]   INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL [J].
NARAYAN, J .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8607-8614
[4]  
WILLIAMS JS, 1983, SURFACE MODIFICATION, pCH5