MICROWAVE PHENOMENA IN BULK GAAS

被引:60
作者
HAKKI, BW
KNIGHT, S
机构
关键词
D O I
10.1109/T-ED.1966.15640
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:94 / +
页数:1
相关论文
共 19 条
[1]   CONTINUOUS MICROWAVE OSCILLATIONS OF CURRENT IN GAAS [J].
BRASLAU, N ;
GUNN, JB ;
STAPLES, JL .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (05) :545-&
[2]  
CHYNOWETH AG, UNPUBLISHED WORK
[3]   ALLOYS FOR GAAS DEVICES [J].
DALE, JR ;
JOSH, MJ .
SOLID-STATE ELECTRONICS, 1964, 7 (02) :177-&
[4]   MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].
GUNN, JB .
SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91
[5]   INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].
GUNN, JB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&
[6]  
GUNN JB, 1965, 7 P INT C PHYS SEM, P199
[7]   PHENOMENOLOGICAL ASPECTS OF CW MICROWAVE OSCILLATIONS IN GaAs [J].
Hakki, B. W. ;
Knight, S. .
SOLID STATE COMMUNICATIONS, 1965, 3 (05) :89-91
[8]  
HAKKI BW, 1965, SOLIDSTATE DEVICES R
[9]  
HAKKI BW, TO BE PUBLISHED
[10]   TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].
HILSUM, C .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&