PULSED MELTING OF SILICON (111) AND (100) SURFACES SIMULATED BY MOLECULAR-DYNAMICS

被引：96

作者：

ABRAHAM, FF ^{[1
]}

BROUGHTON, JQ ^{[1
]}

机构：

[1] SUNY STONY BROOK,DEPT MAT SCI,STONY BROOK,NY 11794

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 56卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.56.734

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：734 / 737

页数：4

共 21 条

[1]

ABRAHAM F, UNPUB

[2]

ABRAHAM FF, UNPUB SURF SCI

[3]

ABRAHAM FF, 1980, SURFACE SCI RECENT P

[4]

BISWAS R, UNPUB

[5] THE FCC (111) AND (100) CRYSTAL-MELT INTERFACES - A COMPARISON BY MOLECULAR-DYNAMICS SIMULATION [J].

BROUGHTON, JQ ;

BONISSENT, A ;

ABRAHAM, FF .

JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (07) :4029-4039

[6] SURFACE FREE-ENERGY AND STRESS OF A LENNARD-JONES CRYSTAL [J].

BROUGHTON, JQ ;

GILMER, GH .

ACTA METALLURGICA, 1983, 31 (06) :845-851

[7] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J].

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1290-1296

[8] NON-CYLINDRICAL GROWTH HABIT OF FLOAT ZONED DISLOCATION-FREE [111] SILICON CRYSTALS [J].

CISZEK, TF .

JOURNAL OF CRYSTAL GROWTH, 1971, 10 (03) :263-&

[9]

DODSON BW, 1985, UNPUB MATERIALS RES

[10] MODELS OF IMPURITY TRAPPING DURING RAPID SOLIDIFICATION [J].

GILMER, GH .

MATERIALS SCIENCE AND ENGINEERING, 1984, 65 (01) :15-25

← 1 2 3 →