GASB-GE PSEUDOBINARY PHASE-DIAGRAM

被引：23

作者：

SHAH, SI ^{[1
]}

CADIEN, KC ^{[1
]}

GREENE, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 01期

关键词：

D O I：

10.1007/BF02654608

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：53 / 58

页数：6

共 7 条

[1] GROWTH OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS [J].

CADIEN, KC ;

ELTOUKHY, AH ;

GREENE, JE .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :773-775

[2] GROWTH AND THERMAL-STABILITY OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS [J].

CADIEN, KC ;

ELTOUKHY, AH ;

GREENE, JE .

VACUUM, 1981, 31 (06) :253-258

[3] METASTABLE SOLID SOLUTIONS IN THE GALLIUM ANTIMONIDE-GERMANIUM PSEUDOBINARY SYSTEM [J].

DUWEZ, P ;

WILLENS, RH ;

KLEMENT, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1500-1500

[4] EPITAXIAL-GROWTH OF IN1-X GAX SB THIN-FILMS BY MULTITARGET RF SPUTTERING [J].

GREENE, JE ;

WICKERSHAM, CE ;

ZILKO, JL .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2289-2297

[5]

NARGOLWALA SS, 1973, ACTIVATION ANAL NEUT

[6] PARAMETRIC NEUTRON-ACTIVATION ANALYSIS OF SAMPLES GENERATING COMPLEX GAMMA-RAY SPECTRA [J].

SCHMIDT, PF ;

RILEY, JE ;

MCMILLAN, DJ .

ANALYTICAL CHEMISTRY, 1979, 51 (02) :189-196

[7]

WICKERSHAM CE, 1976, J APPL PHYS, V47, P473

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