PEROXY RADICAL MODEL FOR CHEMISORPTION OF O-2 ONTO SILICON SURFACES

被引：88

作者：

GODDARD, WA

REDONDO, A

MCGILL, TC

机构：

[1] CALTECH,ARTHUR AMOS NOYES LAB CHEM PHYS,PASADENA,CA 91125

[2] CALTECH,STEELE LAB ELECT SCI,PASADENA,CA 91125

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 08期

关键词：

D O I：

10.1016/0038-1098(76)91221-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：981 / 984

页数：4

共 9 条

[1] PHOTOEMISSION OBSERVATIONS OF PI-D BONDING AND SURFACE-REACTIONS OF ADSORBED HYDROCARBONS ON NI(111) [J].

DEMUTH, JE ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1974, 32 (20) :1123-1127

[2] GENERALIZED VALENCE BOND DESCRIPTION OF BONDING IN LOW-LYING STATES OF MOLECULES [J].

GODDARD, WA ;

DUNNING, TH ;

HUNT, WJ ;

HAY, PJ .

ACCOUNTS OF CHEMICAL RESEARCH, 1973, 6 (11) :368-376

[3] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J].

IBACH, H ;

ROWE, JE .

PHYSICAL REVIEW B, 1974, 10 (02) :710-718

[4] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES [J].

IBACH, H ;

ROWE, JE .

PHYSICAL REVIEW B, 1974, 9 (04) :1951-1957

[5] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].

IBACH, H ;

HORN, K ;

DORN, R ;

LUTH, H .

SURFACE SCIENCE, 1973, 38 (02) :433-454

[6] OXIDATION OF CLEAN GE AND SI SURFACES [J].

LUDEKE, R ;

KOMA, A .

PHYSICAL REVIEW LETTERS, 1975, 34 (18) :1170-1173

[7]

Lunsford J.H., 1972, ADV CATAL, V22, P265

[8] GENERALIZED VALENCE BOND DESCRIPTION OF O2 [J].

MOSS, BJ ;

BOBROWICZ, FW ;

GODDARD, WA .

JOURNAL OF CHEMICAL PHYSICS, 1975, 63 (11) :4632-4639

[9]

Somorjai G. A., 1972, PRINCIPLES SURFACE C

← 1 →